PART |
Description |
Maker |
BS616UV1010 |
Asynchronous 1M(64Kx16) bits Static RAM
|
BSI
|
BS62LV2000 |
Asynchronous 2M(256Kx8) bits Static RAM From old datasheet system
|
BSI
|
BS616LV2010 |
Asynchronous 2M(128Kx16) bits Static RAM From old datasheet system
|
BSI
|
BS616LV4010 |
Asynchronous 4M(256Kx16) bits Static RAM From old datasheet system
|
BSI
|
BS62LV8007 BS62LV8007ECG70 BS62LV8007FIG55 BS62LV8 |
Very Low Power/Voltage CMOS SRAM From old datasheet system Asynchronous 8M(1Mx8) bits Static RAM
|
Brilliance Semiconductor List of Unclassifed Manufacturers BSI ETC[ETC] Electronic Theatre Controls, Inc. List of Unclassifed Man...
|
BS62LV4008 BS62LV4008TI BS62LV4008TC BS62LV4008STC |
From old datasheet system Asynchronous 4M(512Kx8) bits Static RAM Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
|
BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC. Brilliance Semiconducto...
|
BS62LV2008 BS62LV2016SI BS62LV2008DC BS62LV2008DC- |
Very Low Power/Voltage CMOS SRAM 256K X 8 bit 非常低功电压CMOS SRAM56K × 8 From old datasheet system Asynchronous 2M(256Kx8) bits Static RAM
|
Brilliance Semiconducto... BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
|
EDS6416AHBH-75-E EDS6416CHBH-75-E |
64M bits SDRAM (4M words x 16 bits) 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60 64M bits SDRAM (4M words x 16 bits) 6400位的SDRAM4分字× 16位)
|
Elpida Memory, Inc.
|
IDT72T51333 IDT72T51333L5BB IDT72T51333L5BB8 IDT72 |
2.5V MULTI-QUEUE FLOW-CONTROL DEVICES (4 QUEUES) 36 BIT WIDE CONFIGURATION 589,824 bits, 1,179,648 bits and 2,359,296 bits 8Q x18 512K Multi-Queue, 2.5V
|
Integrated Device Technolog... IDT
|
EDD2516AKTA-E |
256M bits DDR SDRAM (16M words x16 bits DDR400)
|
Elpida Memory
|
IS42S16400J-6TL |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|